Introduction to Semiconductor Devices

Introduction to Semiconductor Devices

@VTU COE

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Semiconductor devices are at the heart of the present technological revolution, and they are increasingly prominent in our daily life. This course develops the basic concepts necessary to understand the fundamentals of semiconductor devices. We will apply these concepts to gain insight into the operation of various semiconductor devices such as pn junction diodes, MOSFETs, solar cells and LEDs. This course is primarily directed for undergraduate students pursuing ECE/EE or related programs

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2.1 Effective mass in Semiconductors
Preview 15:40
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2.2 Intrinsic carrier density
Preview 12:07
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2.3 Doping and extrinsic semiconductors
Preview 29:29
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2.4 Fermi level in extrinsic semiconductors
Preview 29:09
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2.5 Temperature dependence of Fermi level
Preview 25:26
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2.6 Temperature dependence of Fermi level
Preview 13:24
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2.7 Charge neutrality relationship
Preview 10:06
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2.8 Drift current and energy band representation of kinetic energy of carriers
Preview 32:02

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3.1 Semiconductor bands in a electric field
Preview 22:15
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3.2 Diffusion current
Preview 16:01
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3.3 Non-uniform doping
Preview 20:17
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3.4 Equilibrium Vs Nonequilibrium carrier response
Preview 19:41
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3.5 Minority carrier diffusion equation (MCDE) - Example problems
Preview 41:04
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3.6 Quasi Fermi level in nonequilibrium conditions
Preview 20:14
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3.7 Quasi Fermi level and minority carrier diffusion length
Preview 15:26
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3.8 Semiconductor device fabrication
Preview 06:34

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4.1 PN Junctions - An introduction
Preview 22:13
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4.2 PN Junction electrostatics
Preview 33:47
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4.3 Energy band diagram of PN junction
Preview 30:24
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4.4 Depletion width and peak electric field
Preview 15:32
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4.5 PN junction electrostatics - examples
Preview 35:47
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4.6 Demo of PN Junction Lab on Nanohub
Preview 19:43

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5.1 Forward and reverse biased PN junctions
Preview 25:00
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5.2 Minority carrier injection in PN junctions
Preview 32:00
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5.3 Current in forward biased PN junction
Preview 16:02
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5.4 Current in reverse biased PN junction
Preview 20:44
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5.5 Depletion capacitance in PN junction
Preview 22:26
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5.6 Non-idealities in PN junction diode
Preview 29:05
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5.7 Nanohub Demo - PN Junction with applied bias
Preview 13:20

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6.1 Schottky barrier in metal-semiconductor junction
Preview 29:59
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6.2 Current flow across a Schottky barrier
Preview 26:08
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6.3 Ohmic vs rectifying contacts
Preview 14:10
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6.4 An Ideal MOS Capacitor
Preview 21:48
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6.5 Operating regimes of a MOSCAP
Preview 15:59
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6.6 Simplified band diagrams of accumulation and depletion in MOSCAP
Preview 11:59
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6.7 Inversion in a MOSCAP
Preview 20:15

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7.1 NMOSCAP in accumulation mode
Preview 23:02
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7.2 NMOSCAP in depletion mode
Preview 16:30
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7.3 NMOSCAP in inversion mode
Preview 16:47
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7.4 Exact solution vs delta-depletion approximation
Preview 39:24
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7.5 Threshold voltage in a MOSCAP
Preview 15:50
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7.6 Nanohub Demo - MOSCAP tool
Preview 25:59

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8.1 Non-ideal MOS Capacitor
Preview 43:40
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8.2 MOSCAP Capacitance-Voltage (CV) Characteristics
Preview 35:04
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8.3 Example problems with MOSCAPs
Preview 33:16
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8.4 Impact of doping, oxide thickness and temperature on CV
Preview 22:22
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8.5 Nanohub Demo - MOS CV
Preview 18:52

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9.1 Introduction to MOSFET
Preview 23:52
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9.2 Operating modes of a MOSFET
Preview 29:36
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9.3 IV Characteristics of a long channel MOSFET
Preview 35:43
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9.4 Example problems with MOSFETs
Preview 19:19
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9.5 MOSFET device metrics
Preview 43:35
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9.6 CMOS Technology
Preview 13:37

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10.1 MOSFET Scaling and technology nodes
Preview 26:13
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10.2 Limits of scaling
Preview 30:16
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10.3 Current characteristics of a short channel MOSFET
Preview 33:55
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10.4 Threshold voltage characteristics of short channel MOSFET
Preview 25:56
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10.5 MOSFETs in the 21st century
Preview 22:53

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11.1 Optical absorption and bandgap
Preview 28:22
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11.2 Introduction to solar cells
Preview 35:16
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11.3 Efficiency of a solar cell
Preview 16:35
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11.4 Types of photodetectors
Preview 28:57
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11.5 PIN and avalanche Photodectectors
Preview 19:06
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11.6 Photodetector metrics
Preview 18:45

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12.1 Radiative absoption and emission processes
Preview 32:41
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12.2 Materials for optoelectronic devices
Preview 33:27
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12.3 Operation of a light emitting diode (LED)
Preview 18:54
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12.4 LED emission spectrum
Preview 18:19
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12.5 Stimulated emission and lasing
Preview 21:00

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Live Session 10-10-2023
Preview 45:16
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Live Session 03-10-2023
Preview 58:55
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Live Session 08-07-2021
Preview 51:10
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@VTU COE
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Instructor
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800 Courses
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VTU is one of the largest Technological Universities in India with 24 years of Tradition of excellence in Engineering & Technical Education, Research and Innovations. It came into existence in the year 1998 to cater the needs of Indian industries for trained technical manpower with practical experience and sound theoretical knowledge.

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  • Course Duration
    32 h 54 m 54 s
  • Course Level
    Intermediate
  • Student Enrolled
    0
  • Language
    English
This Course Includes
  • 32 h 54 m 54 s Video Lectures
  • 0 Quizzes
  • 0 Assignments
  • 0 Downloadable Resources
  • Full Lifetime Access
  • Certificate of Completion